Partager
Institution: University of Bath
Royaume-Uni
Retrouvé: : 2017-05-15 Expiré
Description :
The University of Bath conducts internationally-leading research in the area of III-Nitride semiconductors within the Department of Electronic and Electrical Engineering.   An exciting opportunity has arisen for a Research Associate to join the research team as part of a 5-year EPSRC grant entitled ‘Manufacturing nano-GaN’. This project is being led by Bath and also involves the Universities of Bristol, Sheffield and Strathclyde and a number of industrial partners. The project is coming to the end of its second year.   The appointed person will be responsible for developing large-area nanolithography processes for a number of applications using state-of-the-art equipment housed in the David Bullet Nanofabrication Facility. Using the nanostructured materials you will perform high-quality research in collaboration with our project partners in the areas of nanophotonics, optoelectronics and materials science. One area of focus will be the creation of core-shell light emitters building on Bath’s excellent track record in this area.   We are looking for a motivated experimentalist, proficient in III-V semiconductor processing with the potential to publish in the leading peer-reviewed journals and to help define new areas of research. Prior experience in III-Nitrides and/or their growth by MOVPE is desirable. You should be able to work collaboratively with others and be willing to fit in with the project aims throughout its duration.   This post is full time (36.5 hours per week) and is being offered on a Fixed Term Contract basis, with an expected expiry date of 30 April 2020.

Closing Date: 25 May 2017
Type: Education & Research





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